? semiconductor components industries, llc, 2011 november, 2011 ? rev. 8 1 publication order number: nst489amt1/d nst489amt1, nsvt489amt1g high current surface mount npn silicon low v ce(sat) switching transistor for load management in portable applications features ? aec ? q101 qualified and ppap capable ? nsv prefix for automotive and other applications requiring unique site and control change requirements ? pb ? free packages are available* maximum ratings (t a = 25 ? c) rating symbol max unit collector-emitter voltage v ceo 30 v collector-base voltage v cbo 50 v emitter-base voltage v ebo 5.0 v collector current ? continuous i c 2.0 a collector current ? peak i cm 3.0 a thermal characteristics characteristic symbol max unit total device dissipation t a = 25 ? c derate above 25 ? c p d (note 1) 535 4.3 mw mw/ ? c thermal resistance, junction ? to ? ambient r ja (note 1) 234 ? c/w total device dissipation t a = 25 ? c derate above 25 ? c p d (note 2) 1.180 9.4 w mw/ ? c thermal resistance, junction ? to ? ambient r ja (note 2) 106 ? c/w thermal resistance, junction ? to ? lead #1 r jl (note 1) r jl (note 2) 110 50 ? c/w ? c/w total device dissipation (single pulse < 10 s) p dsingle (notes 2 and 3) 1.75 w junction and storage temperature range t j , t stg ? 55 to +150 ? c stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above the recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliability. 1. fr ? 4 with 1 oz and 3.9 mm 2 of copper area. 2. fr ? 4 with 1 oz and 645 mm 2 of copper area. 3. refer to figure 8. *for additional information on our pb ? free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. tsop ? 6 case 318g style 6 device marking collector 1, 2, 5, 6 3 base 4 emitter 30 volts, 3.0 amps npn transistor http://onsemi.com ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our t ape and reel packaging specifications brochure, brd8011/d. n2 m device package shipping ? ordering information nst489amt1 tssop ? 6 ordering information 3,000 / tape & reel nst489amt1g tssop ? 6 (pb ? free) 3,000 / tape & reel n2 = specific device code m = date code* = pb ? free package *date code orientation may vary depending upon manufacturing location. (note: microdot may be in either location) nsvt489amt1g tssop ? 6 (pb ? free) 3,000 / tape & reel
nst489amt1, nsvt489amt1g http://onsemi.com 2 electrical characteristics (t a = 25 ? c unless otherwise noted) characteristic symbol min typ max unit off characteristics collector ? emitter breakdown voltage (i c = 10 ma, i b = 0) v (br)ceo 30 ? ? v collector ? base breakdown voltage (i c = 0.1 ma, i e = 0) v (br)cbo 50 ? ? v emitter ? base breakdown voltage (i e = 0.1 ma, i c = 0) v (br)ebo 5.0 ? ? v collector cutoff current (v cb = 30 v, i e = 0) i cbo ? ? 0.1 a collector ? emitter cutoff current (v ces = 30 v) i ces ? ? 0.1 a emitter cutoff current (v eb = 4.0 v) i ebo ? ? 0.1 a on characteristics dc current gain (note 4) (i c = 1.0 ma, v ce = 5.0 v) (i c = 0.5 a, v ce = 5.0 v) (i c = 1.0 a, v ce = 5.0 v) h fe 300 300 200 ? 500 ? ? 900 ? collector ? emitter saturation voltage (note 4) (i c = 1.0 a, i b = 100 ma) (i c = 0.5 a, i b = 50 ma) (i c = 0.1 a, i b = 1.0 ma) v ce(sat) ? ? ? 0.10 0.06 0.05 0.200 0.125 0.075 v base ? emitter saturation voltage (note 4) (i c = 1.0 a, i b = 0.1 a) v be(sat) ? ? 1.1 v base ? emitter turn ? on voltage (note 4) (i c = 1.0 a, v ce = 2.0 v) v be(on) ? ? 1.1 v cutoff frequency (i c = 100 ma, v ce = 5.0 v, f = 100 mhz f t 200 300 ? mhz output capacitance (f = 1.0 mhz) c obo ? ? 15 pf 4. pulsed condition: pulse width ? 300 sec, duty cycle ? 2%. figure 1. v ce (sat) versus i b 0.001 0.2 0.01 0.1 1.0 0 0.1 v ce(sat) (v) i b (a) 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 figure 2. v ce (sat) versus i c 0.001 2 0.01 0.1 1.0 0 0.1 v ce(sat) (v) i c (a) 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 i c = 2 a i c = 1 a i c = 500 ma i c = 100 ma i c /i b = 100 i c /i b = 10 figure 3. h fe versus i c figure 4. v be ( on ) versus i c 0.001 2 0.01 0.1 1.2 0 v be(on) (v) i c (a) 0.2 0.4 0.6 0.8 1 1.0 +125 ? c +25 ? c ? 55 ? c v ce = 5 v 0.001 2 0.01 0.1 800 0 100 h fe i c (a) 200 300 400 500 600 700 1 +125 ? c +25 ? c ? 55 ? c v ce = 5 v
nst489amt1, nsvt489amt1g http://onsemi.com 3 figure 5. v be(sat) versus i c 0.001 2 0.01 0.1 1.2 0 v be (sat) (v) i c (a) 0.2 0.4 0.6 0.8 1.0 figure 6. safe operating area i c collector current (a) v ce(sat) (v) 1 i c /i b = 100 i c /i b = 10 0.01 0.10 1.00 10.00 0.10 1.00 10.00 100.00 100 ms 10 ms 1 ms single pulse t amb = 25 ? c 1 s dc 3.0 10 100 1000 1 10 100 1000 figure 7. f t (mhz) versus i c (ma) v ce = 5.0 v ic, collector current (ma) f t , current ? gain bandwidth product (mhz) 0.1 figure 8. normalized thermal response t, time (sec) 1.0 0.001 0.01 0.00001 0.01 0.1 1.0 100 1000 0.1 0.0001 0.001 10 r(t), normalized transient thermal d = 0.5 0.02 0.05 0.2 0.01 single pulse resistance
nst489amt1, nsvt489amt1g http://onsemi.com 4 package dimensions ? 6 case 318g ? 02 issue u 23 4 5 6 d 1 e b e1 a1 a 0.05 notes: 1. dimensioning and tolerancing per asme y14.5m, 1994. 2. controlling dimension: millimeters. 3. maximum lead thickness includes lead finish. minimum lead thickness is the minimum thickness of base material. 4. dimensions d and e1 do not include mold flash, protrusions, or gate burrs. mold flash, protrusions, or gate burrs shall not exceed 0.15 per side. dimensions d and e1 are determined at datum h. 5. pin one indicator must be located in the indicated zone. c *for additional information on our pb ? free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* dim a min nom max millimeters 0.90 1.00 1.10 a1 0.01 0.06 0.10 b 0.25 0.38 0.50 c 0.10 0.18 0.26 d 2.90 3.00 3.10 e 2.50 2.75 3.00 e 0.85 0.95 1.05 l 0.20 0.40 0.60 0.25 bsc l2 ? 0 ? 1 0 ? 1.30 1.50 1.70 e1 e recommended note 5 l c m h l2 seating plane gauge plane detail z detail z 0.60 6x 3.20 0.95 6x 0.95 pitch dimensions: millimeters m style 6: pin 1. collector 2. collector 3. base 4. emitter 5. collector 6. collector on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its of ficers, employees, subsidiaries, af filiates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81 ? 3 ? 5817 ? 1050 nst489amt1/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303 ? 675 ? 2175 or 800 ? 344 ? 3860 toll free usa/canada fax : 303 ? 675 ? 2176 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your local sales representative
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